2N3501 Datasheet PDF - Microsemi

Implement this versatile NPN 2N3501 GP BJT from Microsemi into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.