| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-18-3 |
The PNP 2N2907AUB general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Microsemi
6 Pages / 0.09 MByte
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