| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-5 |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
Jump-start your electronic circuit design with this versatile PNP 2N2905AL GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Microsemi
7 Pages / 0.63 MByte
Multicomp
MULTICOMP 2N2905 Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40V, 200MHz, 3W, 600mA, 100 hFE
Microsemi
Trans GP BJT PNP 40V 0.6A 3Pin TO-39
Raytheon
GB PNP Medium Current General Purpose Amplifier and Switches
ST Microelectronics
2N2905A Series PNP 60V 600mA 0.6W Through Hole Switching Transistor - TO-39-3
Multicomp
The 2N2905A from Multicomp is a through hole, silicon planar PNP transistors in TO-19 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence the device is most suitable for switching and amplification.
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-5
Central Semiconductor
2N Series 60V 600mA PNP Through Hole Silicon Unijunction Transistor - TO-39
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-39
Solid State
SOLID STATE 2N2905A Bipolar (BJT) Single Transistor, PNP, -60V, 3W, -600mA, 50 hFE
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