| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-18 |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
Use this versatile NPN 2N2369A GP BJT from Microsemi to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Microsemi
2 Pages / 0.04 MByte
Microsemi
2 Pages / 0.06 MByte
Multicomp
Bipolar (BJT) Single Transistor, Switching, NPN, 15V, 500MHz, 360mW, 200mA, 40 hFE
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Microsemi
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ST Microelectronics
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