| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 600 mA |
| Case/Package | TO-39 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 800 mW |
| Breakdown Voltage (Collector to Base) | 75.0 V |
| Breakdown Voltage (Collector to Emitter) | 40.0 V (min) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
The 2N2219A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-39 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
● Collector to emitter voltage (Vce) is 40V
● Collector current (Ic) is 0.6A
● Power dissipation (Pd) is 3W
● Collector to emitter saturation voltage of 1V at 500mA collector current
● DC current gain (hFE) of 35 at 0.1mA collector current
● Operating junction temperature range from 175°C
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