1N5819G Datasheet PDF - ON Semiconductor

The 1N5819G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter and freewheeling diodes.

● Cathode indicated by polarity band

● Extremely low forward voltage

● Low stored charge and majority carrier conduction

● Low power loss and high efficiency

● 48V Non-repetitive peak reverse voltage

● 28V RMS reverse voltage

● 80°C/W Junction-to-ambient thermal resistance

●ESD sensitive device, take proper precaution while handling the device.